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d 2 p a k psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak 2 april 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description logic level n-channel mosfet in d2pak package qualified to 175 c. this product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. features and benefits ? high efficiency due to low switching and conduction losses ? suitable for logic level gate drive sources 3. applications ? dc-to-dc converters ? load switiching ? motor control ? server power supplies 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175 c - - 30 v i d drain current t mb = 25 c; v gs = 10 v; fig. 2 [1] - - 120 a p tot total power dissipation t mb = 25 c; fig. 1 - - 306 w t j junction temperature -55 - 175 c static characteristics v gs = 10 v; i d = 25 a; t j = 25 c; fig. 12 - 0.89 1 m r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 100 c; fig. 13 ; fig. 12 - 1.19 1.5 m dynamic characteristics q gd gate-drain charge - 37 - nc q g(tot) total gate charge v gs = 4.5 v; i d = 75 a; v ds = 15 v; fig. 14 ; fig. 15 - 118 - nc
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 2 / 13 symbol parameter conditions min typ max unit avalanche ruggedness e ds(al)s non-repetitive drain- source avalanche energy v gs = 10 v; t j(init) = 25 c; i d = 120 a; v sup 30 v; r gs = 50 ; unclamped - - 1.9 j [1] continuous current is limited by package. 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate 2 d drain [1] 3 s source mb d mounting base; connected to drain m b 1 3 2 d2pak (sot404) s d g m b b 0 7 6 [1] it is not possible to make connection to pin 2 6. ordering information table 3. ordering information package type number name description version psmnr90-30bl d2pak plastic single-ended surface-mounted package (d2pak); 3 leads (one lead cropped) sot404 7. marking table 4. marking codes type number marking code psmnr90-30bl psmnr90-30bl 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 175 c - 30 v v dgr drain-gate voltage t j 25 c; t j 175 c; r gs = 20 k - 30 v
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 3 / 13 symbol parameter conditions min max unit v gs gate-source voltage -20 20 v p tot total power dissipation t mb = 25 c; fig. 1 - 306 w v gs = 10 v; t mb = 100 c; fig. 2 [1] - 120 a i d drain current v gs = 10 v; t mb = 25 c; fig. 2 [1] - 120 a i dm peak drain current pulsed; t p 10 s; t mb = 25 c; fig. 3 - 1573 a t stg storage temperature -55 175 c t j junction temperature -55 175 c t sld(m) peak soldering temperature - 260 c source-drain diode i s source current t mb = 25 c [1] - 120 a i sm peak source current pulsed; t p 10 s; t mb = 25 c - 1573 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs = 10 v; t j(init) = 25 c; i d = 120 a; v sup 30 v; r gs = 50 ; unclamped - 1.9 j [1] continuous current is limited by package. t m b ( c ) 0 2 0 0 1 5 0 5 0 1 0 0 0 3 a a 1 6 4 0 8 0 1 2 0 p d e r ( % ) 0 fig. 1. normalized total power dissipation as a function of mounting base temperature 0 0 3 a a f 7 7 4 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 0 5 0 1 0 0 1 5 0 2 0 0 t m b ( c ) i d ( a ) ( 1 ) fig. 2. continuous drain current as a function of mounting base temperature.
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 4 / 13 0 0 3 a a f 7 7 3 1 0 - 1 1 1 0 1 0 2 1 0 3 1 0 4 1 0 - 1 1 1 0 1 0 2 v d s ( v ) i d ( a ) l i m i t r d s o n = v d s / i d d c 1 0 0 m s 1 0 m s t p = 1 0 m s 1 0 0 m s 1 m s fig. 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base fig. 4 - 0.22 0.49 k/w r th(j-a) thermal resistance from junction to ambient minimum footprint; mounted on a printed-circuit board - 50 - k/w 0 0 3 a a f 7 7 2 1 0 - 3 1 0 - 2 1 0 - 1 1 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 t p ( s ) t p t p t t p t = z t h ( j - m b ) ( k / w ) = 0 . 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 s i n g l e s h o t fig. 4. transient thermal impedance from junction to mounting base as a function of pulse duration; typical values
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 5 / 13 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics i d = 250 a; v gs = 0 v; t j = 25 c 30 - - v v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = -55 c 27 - - v i d = 1 ma; v ds = v gs ; t j = 25 c; fig. 10 ; fig. 11 1.3 1.7 2.2 v i d = 1 ma; v ds = v gs ; t j = 175 c; fig. 11 0.65 - - v v gs(th) gate-source threshold voltage i d = 1 ma; v ds = v gs ; t j = -55 c; fig. 11 - - 2.5 v v ds = 30 v; v gs = 0 v; t j = 25 c - 0.02 10 a i dss drain leakage current v ds = 30 v; v gs = 0 v; t j = 175 c - - 500 a v gs = 16 v; v ds = 0 v; t j = 25 c - 10 100 na i gss gate leakage current v gs = -16 v; v ds = 0 v; t j = 25 c - 10 100 na v gs = 10 v; i d = 25 a; t j = 25 c; fig. 12 - 0.89 1 m v gs = 4.5 v; i d = 25 a; t j = 25 c; fig. 12 - 1.1 1.4 m v gs = 10 v; i d = 25 a; t j = 175 c; fig. 13 ; fig. 12 - 1.65 2 m r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 100 c; fig. 13 ; fig. 12 - 1.19 1.5 m r g gate resistance f = 1 mhz - 1.1 - dynamic characteristics i d = 75 a; v ds = 15 v; v gs = 10 v; fig. 14 ; fig. 15 - 243 - nc i d = 0 a; v ds = 0 v; v gs = 10 v - 222 - nc q g(tot) total gate charge - 118 - nc q gs gate-source charge - 39 - nc q gs(th) pre-threshold gate- source charge - 22 - nc q gs(th-pl) post-threshold gate- source charge - 17 - nc q gd gate-drain charge i d = 75 a; v ds = 15 v; v gs = 4.5 v; fig. 14 ; fig. 15 - 37 - nc v gs(pl) gate-source plateau voltage i d = 75 a; v ds = 15 v; fig. 14 ; fig. 15 - 2.8 - v
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 6 / 13 symbol parameter conditions min typ max unit c iss input capacitance - 14850 - pf c oss output capacitance - 2799 - pf c rss reverse transfer capacitance v ds = 15 v; v gs = 0 v; f = 1 mhz; t j = 25 c; fig. 16 - 1215 - pf t d(on) turn-on delay time v ds = 15 v; r l = 0.2 ; v gs = 5 v; r g(ext) = 5 ; i d = 75 a; t j = 25 c - 95 - ns t r rise time v ds = 15 v; r l = 0.2 ; v gs = 5 v; r g(ext) = 5 ; t j = 25 c; i d = 75 a - 213 - ns t d(off) turn-off delay time - 199 - ns t f fall time v ds = 15 v; r l = 0.2 ; v gs = 5 v; r g(ext) = 5 ; i d = 75 a; t j = 25 c - 115 - ns source-drain diode v sd source-drain voltage i s = 25 a; v gs = 0 v; t j = 25 c; fig. 17 - 0.8 1.2 v t rr reverse recovery time - 67 - ns q r recovered charge i s = 25 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 15 v - 123 - nc 0 0 3 a a f 7 6 2 0 6 0 1 2 0 1 8 0 2 4 0 3 0 0 0 2 0 4 0 6 0 8 0 i d ( a ) g f s ( s ) fig. 5. forward transconductance as a function of drain current; typical values 0 0 3 a a f 7 6 6 1 0 3 1 0 4 1 0 5 1 0 - 1 1 1 0 1 0 2 v g s ( v ) c ( p f ) c i s s c r s s fig. 6. input and reverse transfer capacitances as a function of gate-source voltage; typical values
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 7 / 13 0 0 3 a a f 7 6 4 0 1 2 3 4 5 0 4 8 1 2 1 6 v g s ( v ) r d s o n ( m ) fig. 7. drain-source on-state resistance as a function of gate-source voltage; typical values 0 0 3 a a f 7 6 3 0 1 5 3 0 4 5 6 0 7 5 0 0 . 6 1 . 2 1 . 8 2 . 4 3 v g s ( v ) i d ( a ) t j = 2 5 c t j = 1 7 5 c fig. 8. transfer characteristics: drain current as a function of gate-source voltage; typical values 0 0 3 a a d 0 1 1 0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 0 2 4 6 8 1 0 v d s ( v ) i d ( a ) 3 . 5 3 4 . 5 2 . 8 2 . 6 v g s ( v ) = 2 . 4 1 0 fig. 9. output characteristics: drain current as a function of drain-source voltage; typical values 0 0 3 a a b 2 7 1 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 0 1 2 3 v g s ( v ) i d ( a ) m a x t y p m i n fig. 10. sub-threshold drain current as a function of gate-source voltage
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 8 / 13 0 0 3 a a c 9 8 2 0 1 2 3 - 6 0 0 6 0 1 2 0 1 8 0 t j ( c ) v g s ( t h ) ( v ) m a x t y p m i n fig. 11. gate-source threshold voltage as a function of junction temperature 0 0 3 a a g 6 6 8 0 2 4 6 8 1 0 0 1 0 0 2 0 0 3 0 0 i d ( a ) r d s o n ( m ) 3 . 5 2 . 6 1 0 4 . 5 v g s ( v ) = 3 2 . 8 fig. 12. drain-source on-state resistance as a function of drain current; typical values 0 0 3 a a f 7 6 7 0 0 . 5 1 1 . 5 2 - 6 0 0 6 0 1 2 0 1 8 0 t j ( c ) a fig. 13. normalized drain-source on-state resistance factor as a function of junction temperature 0 0 3 a a a 5 0 8 v g s v g s ( t h ) q g s 1 q g s 2 q g d v d s q g ( t o t ) i d q g s v g s ( p l ) fig. 14. gate charge waveform definitions
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 9 / 13 0 0 3 a a f 7 6 8 0 2 4 6 8 1 0 0 1 0 0 2 0 0 3 0 0 q g ( n c ) v g s ( v ) v d s = 6 v 2 4 v 1 5 v fig. 15. gate-source voltage as a function of gate charge; typical values 0 0 3 a a f 7 6 9 1 0 2 1 0 3 1 0 4 1 0 5 1 0 - 1 1 1 0 1 0 2 v d s ( v ) c ( p f ) c i s s c r s s c o s s fig. 16. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 0 0 3 a a f 7 7 0 0 1 5 3 0 4 5 6 0 7 5 0 0 . 2 0 . 4 0 . 6 0 . 8 1 v s d ( v ) i s ( a ) t j = 2 5 c t j = 1 7 5 c fig. 17. source current as a function of source-drain voltage; typical values
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 10 / 13 11. package outline references outline version european projection issue date iec jedec jeita sot404 sot404_po 06-03-16 13-02-25 unit m m max nom min 4.5 4.1 1.40 1.27 1.45 1.05 0.64 0.46 1 1 1.6 1.2 a dimensions (mm are the original dimensions) plastic single-ended surface-mounted package (d2p ak); 3 leads (one lead cropped) sot404 a 1 b 0.85 0.60 b 2 c d d 1 e e h d l p q 2.54 15.8 14.8 2.6 2.2 10.3 9.7 2.9 2.1 0 5 mm scale e e e b d 1 h d d b 2 q l p c a 1 a 1 3 2 mounting base fig. 18. package outline d2pak (sot404)
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 11 / 13 12. legal information 12.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". 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nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 12 / 13 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. non-automotive qualified products unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors standard warranty and nxp semiconductors product specifications. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i- code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp semiconductors n.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors psmnr90-30bl n-channel 30 v 1.0 m? logic level mosfet in d2pak psmnr90-30bl all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 2 april 2014 13 / 13 13. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 9 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ? nxp semiconductors n.v. 2014. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 2 april 2014

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